Triode/MOS tube/transistor/module

These N-channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is ideal for minimizing on-resistance. These devices are ideal for low-voltage applications such as notebook computers, cell phones, PCMCIA cards, and other battery-powered circuits, where fast switching and low in-line power losses are required in very small surface-mount encapsulations.

14V, -14V/6A, -4A/N+P

MOS N-channel 60V/162A 3.5mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 50V Continuous drain current (Id): 340mA Power (Pd): 360mW On-resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,300mA

CSD17304Q3 30V, N-Channel NexFET MOSFET™, Single SON3x3, 8.8mΩ

MOS tube, DFN-8 5*6, N channel, withstand voltage: 200V