Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-100mA

Dual N-channel, 30V, 7.5A, 16mΩ@10V

This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

N-channel, 30V, 85A, 4mΩ@10V

PNP, Vceo=-20V, Ic=-1A, hfe=100~250

Semiconductor transistor field effect transistor MOS tube, TO-220, P channel, withstand voltage: -60V, current: -60A, 10V internal resistance (Max): 0.0195Ω, 4.5V internal resistance (Max): 0.022Ω, power: 100W

The FGH30N60LSD IGBT utilizes ON Semiconductor's planar technology and has excellent conduction performance, providing the best performance in applications such as solar inverters, UPS, where low conduction loss is the most important factor.

1200v/300a 3.2Vce