Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-2A

Type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 2.9A Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 45mΩ@10V, 2.9A working Temperature: +150℃@(Tj)

UMH1N-F2-0000HF

Type N VDS(V) 60V VGS(V) ±20V Vth(V) 1.6V RDS(ON)(mΩ) 30mΩ ID(A) 30A

N-channel, 800V, 7A, 1.6Ω

N-channel 20V 3A

PNP, Vceo=-80V, Ic=-0.4A, hfe=120~240

N-channel, 30V, 20A, 0.016Ω@4.5V

PNP

Triode Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA, 1V 200-350 PNP