Triode/MOS tube/transistor/module

ULN2004A High Voltage, High Current Darlington Transistor Array

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of UniFET FRFET MOSFETs is enhanced through lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

N-channel, 50V, 0.3A, 2.3Ω@4.5V

N-channel, 800V, 8A, 1.55Ω@10V

Type NPN IC(A) 0.1 VCBO(V) 50 VCEO(V) 45 VEBO(V) 6 VCE(sat)(V) 0.6

NPN 150W 110W 7A Applications: Designed for driver or output unit applications in audio amplifier circuits.

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 13.5/16 Continuous Drain Current ID (A) 40

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.