Triode/MOS tube/transistor/module

The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is suitable for systems using 5.0 V TTL or CMOS logic.

MOS tube type: 2 N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V ,300mA

PNP 40V 600mA silkscreen 2T MMBT4403 with the same function and pin sequence

Type N VDSS(V) 40 VGS(V) 20 VTH(V) 1 IDS83°C(A) 10 RDS(Max) 30 PD83°C(W) 50

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CSD18504Q5A 40V N-Channel NexFET™ Power MOSFET

PNP-60V

N-channel, 600V, 2A, 3.7Ω@10V