Triode/MOS tube/transistor/module

NPN, Vceo=45V, Ic=0.1A, hfe=110~220, silk screen 1E

N-channel 130A 100V

N-channel, 600V, 6.2A, 1.2Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 4A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,3A Threshold Voltage Vgs(th)@Id): 1.0V to 2.5V@250uA

Automotive power MOSFETs for low power applications. Small Signal MOSFET, -20V, -400mA, 800mΩ, Single P-Channel, SOT-23, Logic Level AEC-Q101 Qualified MOSFET, Production Part Approval Process (PPAP), Suitable for Automotive Applications.

PNP

Collector-emitter breakdown voltage (Vceo): -40V Collector current (Ic): 200mA Power (Pd): 150mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat)@Ic, Ib): 400mV@50mA, 5mA DC current gain (hFE@Ic, Vce): 100@10mA