Optocoupler/LED/nixie tube/photoelectric device

4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor type optocoupler opto-isolators. Gallium Arsenide Infrared Emitting Diodes are coupled to high voltage NPN silicon phototransistors. The device uses standard plastic six-pin dual-row plug-in encapsulation.

The FOD814 consists of two anti-parallel GaAs infrared light-emitting diodes that drive the output of a silicon phototransistor in a 4-pin dual column plug-inencapsulation. The FOD817 series contains Gallium Arsenide Infrared Emitting Diodes driving silicon phototransistors in a 4-pin dual column plug-inencapsulation.

The MOC3071M, MOC3072M, and MOC3073M consist of a GaAs infrared light-emitting diode optically coupled to a non-zero-crossing silicon bidirectional switch (three-way device). These devices isolate low voltage logic from the 240 VAC line and provide random phase control of high current triacs or thyristors. These devices have enhanced static dv/dt capability to ensure stable switching performance for inductive loads.