Optocoupler/LED/nixie tube/photoelectric device

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.

The MOC3071M, MOC3072M, and MOC3073M consist of a GaAs infrared light-emitting diode optically coupled to a non-zero-crossing silicon bidirectional switch (three-way device). These devices isolate low voltage logic from the 240 VAC line and provide random phase control of high current triacs or thyristors. These devices have enhanced static dv/dt capability to ensure stable switching performance for inductive loads.

The H11NX-M series features a high-speed integrated circuit detector optically coupled to an AlGaAs infrared light-emitting diode. The output incorporates a Schmitt trigger, providing hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for operational simplicity and utilizes an open collector output for maximum application flexibility.