Optocoupler/LED/nixie tube/photoelectric device

Micro lamp with PCB as substrate, wavelength: 565-569nm, brightness 650mcd, 2V

0603 white light 0603 positive white LED patch, material: gold plate + gold wire

Brightness: 300-1000V;;;200-800V;;;1500-5000 Electroplating: bright tin Others: cut flat feet 8MM Soldering temperature: 265±5℃

0805 blue SMD LED lamp beads

The packaging method is different from TLP185(GB-TPL,SE(T, other performances are the same, please refer to the link for detailed differences: http://toshiba.semicon-storage.com/info/lookup.jsp?pid=4pin%20SO6&lang=zh_cn

SMD patch 0603 bright yellow light emits from the top, transparent colloid, yellow light, voltage VF: 1.8-2.6V@20mA, brightness Iv: 90-180mcd@test current 20mA, dominant wavelength λd: 585.5~594.5nm, light angle: 120deg

The 6N137M, HCPL2601M, HCPL2611M single-channel and HCPL2630M, HCPL2631M dual-channel consist of an 850 nm AlGaAS LED optically coupled to a very high-speed integrated photodetector logic gate with tunable output. This output has an open collector allowing a wired OR output. Coupling parameters are guaranteed from -40°C to +85°C. Input signals up to 5mA provide a minimum output sink of 13mA (fan-out 8). Internal noise shielding provides excellent common-mode rejection, typically 10kV/µs. The HCPL2601M and HCPL2631M have a minimum CMR of 5kV/µs. The minimum CMR of the HCPL2611M is 10kV/?s.

0402 red SMD LED lamp beads

Infrared LED 2835encapsulation, wavelength 940nm, angle 100°, IF≤100mA, voltage 1.4V-2.0V Infrared lamp, LED, emission tube

The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high-speed phototransistor. A separate connection for photodiode biasing reduces the base-collector capacitance of the input transistor and is orders of magnitude faster than conventional phototransistors. The HCPL4503M has no internal connection to the phototransistor base, improving noise immunity. Internal interference shielding with excellent common-mode rejection up to 50,000 V/µs.