Diode/Bridge Rectifier

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

I(AV) 5 VRRM(V) 300 IFsM(A) 100 VFM(V) 0.78 VFMI(AV)(A) 5 IRM@VRRM(μA) 5

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DC reverse withstand voltage (Vr) 40 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.5