Schottky diode Silicon carbidediode configuration: stand-alone DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 3A Forward voltage drop (Vf): 920mV@3A
DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 15A Forward voltage drop (Vf): [email protected] Reverse current (Ir): 10μA@1kV Forward surge current (Ifsm) 250A working Temperature: -55℃~+150℃@(Tj)
These Schottky diode barrier diodes are optimized for low forward voltage drop and low leakage current, providing the best power dissipation performance in the application. They feature a space-saving miniature encapsulation for applications where space is limited.