Diode/Bridge Rectifier

200V, 3A, VF=0.95V@3A

0.5A/1000V Rectifier bridge, comply with ROHS

40V, 3A, VF=0.5V@3A

The Schottky diode adopts the Schottky diode potential barrier principle in the large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.