Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 100V Silicon carbide Average rectified current (Io): 5A Forward voltage drop (Vf): 680mV@5A Silicon carbide reverse current (Ir): 200μA@100V

DC reverse withstand voltage (Vr): 100V Silicon carbide Average rectified current (Io): 5A Forward voltage drop (Vf): 680mV@5A Silicon carbide reverse current (Ir): 200μA@100V

40V, 3A, VF=0.5V@3A

The RHRP30120 is an ultra-high-speed diode with soft recovery characteristics. It adopts silicon nitride passivation ion-implanted epitaxial planar structure, and its recovery time is only half of the recovery time of ultra-fast diodes. These devices are primarily used as freewheeling/clamping diodes in various switching power supplies and other power switching applications. Its low stored charge and ultra-fast soft recovery minimize ringing and electrical noise in many power switching circuits, thereby reducing power dissipation in switching transistors.

100V,2A,VF=0.85V@2A

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@1A