Diode/Bridge Rectifier

40V, 5A, VF=0.48V@5A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

I(AV) 1 VRRM(V) 600 IFsM(A) 30 VFM(V) 1.65 VFMI(AV)(A) 1 IRM@VRRM(μA) 5 trr(ns) 35

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.0V@5A Reverse current (Ir): 10uA@100V Reverse recovery time (trr): 50ns

400V 35A