Adapt to ultra-high working temperature environment, DC reverse withstand voltage (Vr) 60V, average rectified current (Io) 2A, forward voltage drop (Vf) 0.6V@1A, 0.65V@2A
Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 20A Forward voltage drop (Vf): 560mV@10A Reverse current (Ir): 100uA@40V
The Schottky diode adopts the Schottky diode potential barrier principle in the large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.