Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 40V \nAverage rectified current (Io): 1A \n Silicon carbide Silicon carbide Silicon carbide Silicon carbide Silicon carbide Silicon carbide Silicon carbide Operating temperature: -55℃+125℃@(Tj)\ n Silicon carbide Silicon carbide Silicon carbide Forward voltage drop (Vf): 550mV@1A \n Silicon carbide reverse current (Ir): 100uA@40V \n Forward surge current (Ifsm): 30A

Diode configuration: DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 3A Forward voltage drop (Vf): 920mV@3A Reverse current (Ir): 20uA@200V

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 0.55V@1A

1000V, 1A, VF=1V@1A, rectifier diode

Diode configuration: Stand-alone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 5A Forward voltage drop (Vf): 550mV@5A

60V,2A,VF=0.7V@2A

200V, 5A, VF=0.95V@5A

200V, 5A, VF=0.95V@5A