Diode/Bridge Rectifier

Schottky diode Silicon carbideLOW VFSchottky diode reverse withstand voltage (Vr): 40V Silicon carbide forward voltage drop (Vf): VF<

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

The MB series Bridge rectifier is a 0.5 A rectifier series that achieves high surge current absorption and occupies a very small footprint. The MB series has a small form factor of 35 mm2 and has excellent surge capability. To absorb high surge currents, the design supports a forward surge peak current (IFSM) rating of 35 A and a 5.0 A 2-second I2T capability. This family of devices also features a breakdown voltage rating of up to 1000 V. These features make the MB series suitable for small power supplies requiring slightly stronger surge capability. If you need higher IFAV rated current, smaller encapsulation, or lower VF value, please learn about ON Semiconductor MDB series Bridge rectifier. If you need lower VF and higher energy efficiency values ​​in MB encapsulation, or even higher surge capability, or need higher surge capability, please find out about ON Semiconductor's upcoming MBxSV series.