Diode/Bridge Rectifier

Diode module

Schottky diode Silicon carbideLOW VFSchottky diode reverse withstand voltage (Vr): 40V Silicon carbide forward voltage drop (Vf): VF<

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

NRVTS360ETFS is an extremely low leakage trench Schottky diode. This new technology enables low forward voltage drop without the high reverse leakage found in planar Schottky diodes. This platform also provides very stable switching characteristics over a wide temperature range, making it an ideal output for switching power supplies.