Diode/Bridge Rectifier

I(AV) 10 VRRM(V) 400 IFsM(A) 170 VFM(V) 1.25 VFMI(AV)(A) 10 IRM@VRRM(μA) 1 trr(ns) 35

...Using the Schottky diode potential barrier principle, a large-area metal-silicon power diode is used. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

Semiconductor diode Schottky diode Silicon carbideSchottky diode, TO-220F, 100V, 20A,

Semiconductor diode Schottky diode Silicon carbideSchottky diode, TO-220F, 100V, 20A,

DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V@15mA 70V 70mA double diode

ST fast recovery diode

DC Reverse Withstand Voltage (Vr) 1000 Average Rectified Current (Io) 2 Forward Surge Current (Ifsm) 60 Reverse Current (Ir) 10