Schottky diode Silicon carbidediode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V
Schottky diode Silicon carbidediode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V
This Schottky diode is suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulation is ideal for handheld and portable applications where space is limited.