Diode/Bridge Rectifier

30V, 100mA, VF=800mV@100mA

1 pair of common cathode 120V 15A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

This standard rectifier is suitable for general purpose low power applications.

Diode configuration: Independent DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V@1A Reverse current (Ir): 5uA@600V Reverse recovery time ( trr): 250ns Operating temperature: -55℃~+150℃@(Tj) 600V, 1A, VF=1.3V@1A

VR reverse withstand voltage/1000V: IR reverse current/5u: VF forward current/1.1V: IO average current/6A: