Diode/Bridge Rectifier

100V, 1A, VF=1.1V@1A

KBPC2508W-A1-0000

650V, 4A, VF=1.78V@4A

40V 1A

40V 1A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

D25JA100-B1-0000