Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

This switching diode is suitable for high speed switching applications.

Diode configuration: Independent DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 950mV@1A Reverse current (Ir): 5uA@200V Reverse recovery time (trr ): 35ns Operating temperature: -65℃~+150℃@(Tj)

GS1MB-F1-0000HF