Diode/Bridge Rectifier

Fast Recovery Diode F1M

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 600mV@1A Reverse current (Ir): 1mA@40V

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 600mV@1A Reverse current (Ir): 1mA@40V

I(AV) 3 VRRM(V) 40 IFsM(A) 80 VFM(V) 0.55 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.5

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry features chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

SuperFast,1A/600V,SMA;PEC

VR=20V IF=0.5A [email protected]