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SISS71DN-T1-GE3

SISS71DN-T1-GE3

Product Overview

Category

The SISS71DN-T1-GE3 belongs to the category of semiconductor devices, specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

Use

This product is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The SISS71DN-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in electronic circuits, contributing to improved energy efficiency and performance.

Packaging/Quantity

It is usually supplied in reels containing 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 50A
  • RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 22nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SISS71DN-T1-GE3 features the following pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D) 4. N/C (Not Connected) 5. N/C 6. N/C 7. N/C 8. Source (S)

Functional Features

  • Low conduction losses
  • High current-carrying capability
  • Enhanced thermal performance
  • Fast and efficient switching characteristics

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-state resistance for reduced power dissipation
  • Fast switching speed for improved efficiency

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway if not properly managed

Working Principles

The SISS71DN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in various applications including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SISS71DN-T1-GE3 include: - SISS72DN-T1-GE3 - SISS73DN-T1-GE3 - SISS74DN-T1-GE3

In conclusion, the SISS71DN-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, with careful consideration needed for its handling and thermal management to fully leverage its advantages while mitigating potential disadvantages.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SISS71DN-T1-GE3 v technických řešeních

  1. What is the maximum voltage rating for SISS71DN-T1-GE3?

    • The maximum voltage rating for SISS71DN-T1-GE3 is 30V.
  2. What is the typical on-state resistance of SISS71DN-T1-GE3?

    • The typical on-state resistance of SISS71DN-T1-GE3 is 8.5 mΩ.
  3. Can SISS71DN-T1-GE3 be used in automotive applications?

    • Yes, SISS71DN-T1-GE3 is suitable for automotive applications.
  4. What is the maximum continuous drain current for SISS71DN-T1-GE3?

    • The maximum continuous drain current for SISS71DN-T1-GE3 is 100A.
  5. Is SISS71DN-T1-GE3 RoHS compliant?

    • Yes, SISS71DN-T1-GE3 is RoHS compliant.
  6. What is the operating temperature range for SISS71DN-T1-GE3?

    • The operating temperature range for SISS71DN-T1-GE3 is -55°C to 175°C.
  7. Does SISS71DN-T1-GE3 have built-in ESD protection?

    • Yes, SISS71DN-T1-GE3 has built-in ESD protection.
  8. What is the gate threshold voltage for SISS71DN-T1-GE3?

    • The gate threshold voltage for SISS71DN-T1-GE3 is typically 2.5V.
  9. Can SISS71DN-T1-GE3 be used in power management applications?

    • Yes, SISS71DN-T1-GE3 is suitable for power management applications.
  10. What package type is SISS71DN-T1-GE3 available in?

    • SISS71DN-T1-GE3 is available in a D2PAK package.