SI4660DY-T1-GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current circuits
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: SO-8
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 120A
• RDS(ON): 1.6mΩ
• Gate Charge (Qg): 40nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate
2. Source
3. Drain
4. N/C
5. N/C
6. Drain
7. Source
8. Gate

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• High current handling capability

Advantages

• High efficiency
• Low on-resistance
• Suitable for high-current applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI4660DY-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in power supplies, motor control circuits, DC-DC converters, and other high-current switching applications. Its low on-resistance and high current rating make it suitable for demanding power electronics designs.

Detailed and Complete Alternative Models

1. IRF3205
2. FDP8870
3. IPP60R190E6

Note: The alternative models listed above are similar power MOSFETs with comparable specifications and characteristics.

This completes the entry for SI4660DY-T1-GE3 according to the English editing encyclopedia format.