VS-MURB820HM3

Product Category: Rectifier Diode

Basic Information Overview: - Category: Semiconductor component - Use: Rectifying current in electronic circuits - Characteristics: High efficiency, low forward voltage drop, fast switching speed - Package: SOD-123FL - Essence: Silicon rectifier diode - Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications: - Forward Voltage Drop: 0.72V at 1A - Reverse Voltage: 200V - Average Rectified Current: 8A - Peak Surge Current: 100A - Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration: - Anode (A) - Cathode (K)

Functional Features: - High efficiency rectification - Fast switching speed - Low power loss - Compact package design

Advantages: - Low forward voltage drop reduces power dissipation - Fast switching speed allows for high-frequency operation - Compact package saves board space

Disadvantages: - Limited reverse voltage compared to some alternative models - Peak surge current may be insufficient for certain applications

Working Principles: The VS-MURB820HM3 operates on the principle of semiconductor rectification, allowing current to flow in one direction while blocking it in the opposite direction. When a positive voltage is applied to the anode with respect to the cathode, the diode conducts, allowing current to flow. In the reverse bias condition, the diode blocks the current flow.

Detailed Application Field Plans: - Switching power supplies - LED lighting - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models: - 1. VS-MURB820LT3G - 2. VS-MURB820ET3G - 3. VS-MURB820WT3G

This comprehensive entry provides a detailed overview of the VS-MURB820HM3 rectifier diode, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.