VS-8TQ080GPBF

Product Category: Power Semiconductor

Basic Information Overview: - Category: Schottky Diode - Use: Rectification and power management in electronic circuits - Characteristics: High efficiency, low forward voltage drop, fast switching speed - Package: TO-220AB - Essence: Efficient power conversion and management - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 80V - Current Rating: 8A - Forward Voltage Drop: 0.55V at 8A - Reverse Leakage Current: 10μA at 80V - Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode - Pin 3: Not connected (Tab)

Functional Features: - Fast switching for high-frequency applications - Low power loss and high efficiency - Suitable for use in reverse polarity protection circuits

Advantages: - Low forward voltage drop reduces power dissipation - Fast switching speed allows for high-frequency operation - Compact TO-220AB package for easy mounting

Disadvantages: - Higher cost compared to standard rectifier diodes - Limited to lower voltage and current ratings compared to other power diodes

Working Principles: The VS-8TQ080GPBF operates based on the Schottky barrier principle, where the metal-semiconductor junction provides a low forward voltage drop during conduction.

Detailed Application Field Plans: - Switching power supplies - DC-DC converters - Reverse polarity protection circuits - Solar panel bypass diodes

Detailed and Complete Alternative Models: - 1N5822: 40V, 3A, DO-201AD package - SS34: 40V, 3A, SMA package - SB560: 60V, 5A, DO-201AD package

This comprehensive entry provides an in-depth understanding of the VS-8TQ080GPBF, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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