VS-30TPS08PBF

Product Overview

Category

The VS-30TPS08PBF belongs to the category of power semiconductor devices.

Use

It is used for high-power applications such as industrial equipment, power supplies, and motor drives.

Characteristics

• High voltage capability
• Low forward voltage drop
• Fast switching speed
• High thermal conductivity

Package

The VS-30TPS08PBF is typically available in a TO-247 package.

Essence

The essence of the VS-30TPS08PBF lies in its ability to handle high power levels efficiently and reliably.

Packaging/Quantity

It is commonly packaged individually and sold in quantities suitable for industrial applications.

Specifications

• Voltage Rating: 800V
• Current Rating: 30A
• Forward Voltage Drop: 1.3V at 15A
• Reverse Recovery Time: 35ns
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The VS-30TPS08PBF typically has three pins: 1. Anode 2. Cathode 3. Gate

Functional Features

• High voltage capability allows for use in demanding applications
• Low forward voltage drop minimizes power loss
• Fast switching speed enables efficient operation
• High thermal conductivity ensures effective heat dissipation

Advantages

• Suitable for high-power applications
• Efficient energy conversion
• Reliable performance under high stress conditions

Disadvantages

• Higher cost compared to lower power devices
• Requires careful thermal management due to high power dissipation

Working Principles

The VS-30TPS08PBF operates based on the principles of power rectification and control, allowing it to efficiently manage high power levels while minimizing losses.

Detailed Application Field Plans

The VS-30TPS08PBF is well-suited for use in: - Industrial motor drives - Uninterruptible power supplies (UPS) - Welding equipment - Power factor correction circuits

Detailed and Complete Alternative Models

Some alternative models to the VS-30TPS08PBF include: - IXYS MCC312-16IO1 - Infineon FF450R12ME4 - STMicroelectronics STW45NM50FD

In conclusion, the VS-30TPS08PBF is a high-power semiconductor device with robust characteristics, making it suitable for demanding industrial applications that require efficient power handling and control.

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