VS-10ETF12STRR-M3

1. Introduction

The VS-10ETF12STRR-M3 is a semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

2. Basic Information Overview

• Category: Power MOSFET
• Use: The VS-10ETF12STRR-M3 is used as a switching device in various electronic circuits, particularly in power supply and motor control applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate drive power.
• Package: The device is typically housed in a TO-220AB package.
• Essence: It serves as a crucial component in controlling the flow of power within electronic circuits.
• Packaging/Quantity: The VS-10ETF12STRR-M3 is commonly packaged individually and is available in varying quantities based on manufacturer specifications.

3. Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 10A
• On-State Resistance: 0.12Ω
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220AB

4. Detailed Pin Configuration

The VS-10ETF12STRR-M3 typically consists of three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

5. Functional Features

• High Switching Speed: Enables rapid switching between on and off states.
• Low On-State Resistance: Minimizes power dissipation and improves efficiency.
• Low Gate Drive Power: Reduces the power required to drive the MOSFET.

6. Advantages and Disadvantages

Advantages

• Efficient Power Control: Enables precise control over power flow in electronic circuits.
• Fast Switching: Facilitates quick transitions between conducting and non-conducting states.
• Low Power Dissipation: Helps in minimizing energy losses during operation.

Disadvantages

• Sensitivity to Overvoltage: May be susceptible to damage if subjected to voltage spikes beyond the specified limits.
• Gate-Drive Complexity: Requires careful consideration of gate drive circuitry for optimal performance.

7. Working Principles

The VS-10ETF12STRR-M3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively regulate the power flow within the circuit.

8. Detailed Application Field Plans

The VS-10ETF12STRR-M3 finds extensive use in various applications, including: - Power Supplies: Used in switch-mode power supplies for efficient power conversion. - Motor Control: Employed in motor drive circuits for precise speed and torque control. - Lighting Systems: Integrated into LED driver circuits for regulating luminosity.

9. Detailed and Complete Alternative Models

Several alternative models with similar characteristics and specifications include: - IRF540N - FQP30N06L - STP55NF06L - IRLZ44N - PSMN022-30PL

In conclusion, the VS-10ETF12STRR-M3 power MOSFET offers efficient power control, fast switching, and low power dissipation, making it suitable for diverse electronic applications.

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