The UGB15JT-E3/81 belongs to the category of power transistors and is commonly used in electronic circuits for amplification and switching purposes. This N-channel IGBT (Insulated Gate Bipolar Transistor) features high efficiency, low conduction losses, and fast switching characteristics. The package includes a single UGB15JT-E3/81 transistor with specific technical specifications.
The UGB15JT-E3/81 operates based on the principles of controlling the flow of current through its N-channel IGBT structure. When a suitable voltage is applied to the gate terminal, it allows the current to flow between the collector and emitter terminals, enabling amplification or switching functions.
This comprehensive entry provides an in-depth understanding of the UGB15JT-E3/81, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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What is the maximum continuous forward current for UGB15JT-E3/81?
What is the reverse voltage rating of UGB15JT-E3/81?
What is the typical junction capacitance of UGB15JT-E3/81?
What is the thermal resistance junction to case (RthJC) for UGB15JT-E3/81?
Can UGB15JT-E3/81 be used in high-frequency applications?
Is UGB15JT-E3/81 suitable for use in power supplies?
What is the operating temperature range for UGB15JT-E3/81?
Does UGB15JT-E3/81 require a heat sink for proper operation?
What are the typical applications for UGB15JT-E3/81?
Is UGB15JT-E3/81 RoHS compliant?