Vishay Semiconductor Diodes Division
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SS1H10HE3_B/I
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SS1H10HE3_B/I

Product Category: Semiconductor Diode

Basic Information Overview: - Category: Rectifier Diode - Use: Used in rectifying circuits to convert alternating current (AC) to direct current (DC) - Characteristics: High efficiency, low forward voltage drop, fast switching speed - Package: SOD-123 Package - Essence: Silicon diode with high current carrying capacity - Packaging/Quantity: Available in tape and reel packaging, quantity varies by manufacturer

Specifications: - Forward Voltage Drop: 0.7V - Reverse Voltage: 100V - Forward Current: 1A - Reverse Recovery Time: 50ns - Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode

Functional Features: - Fast recovery time - Low leakage current - High surge current capability

Advantages: - High efficiency - Fast switching speed - Low power dissipation

Disadvantages: - Limited reverse voltage capability - Sensitivity to temperature variations

Working Principles: The SS1H10HE3_B/I rectifier diode operates by allowing current to flow in one direction while blocking it in the opposite direction, enabling the conversion of AC to DC in electronic circuits.

Detailed Application Field Plans: - Power supply units - Battery chargers - LED lighting systems - Switching power supplies

Detailed and Complete Alternative Models: - 1N4001 - 1N4148 - 1N5819 - 1N5408

This semiconductor diode is widely used in various electronic applications due to its high efficiency and fast switching speed, making it a popular choice for power supply and rectification circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SS1H10HE3_B/I v technických řešeních

Sure, here are 10 common questions and answers related to the application of SS1H10HE3_B/I in technical solutions:

  1. Question: What is the maximum forward voltage of SS1H10HE3B/I?
    Answer: The maximum forward voltage of SS1H10HE3    B/I is typically 0.55V at a forward current of 1A.

  2. Question: What is the reverse recovery time of SS1H10HE3B/I?
    Answer: The reverse recovery time of SS1H10HE3    B/I is typically 35ns.

  3. Question: Can SS1H10HE3B/I be used in high-frequency applications?
    Answer: Yes, SS1H10HE3    B/I is suitable for high-frequency applications due to its fast recovery time.

  4. Question: What is the maximum repetitive peak reverse voltage of SS1H10HE3B/I?
    Answer: The maximum repetitive peak reverse voltage of SS1H10HE3    B/I is 100V.

  5. Question: Is SS1H10HE3B/I suitable for use in switching power supplies?
    Answer: Yes, SS1H10HE3    B/I is commonly used in switching power supply applications.

  6. Question: What is the operating temperature range of SS1H10HE3B/I?
    Answer: The operating temperature range of SS1H10HE3    B/I is -55°C to +150°C.

  7. Question: Can SS1H10HE3B/I be used in rectifier circuits?
    Answer: Yes, SS1H10HE3    B/I is often used as a rectifier in various circuits.

  8. Question: Does SS1H10HE3B/I have a low leakage current?
    Answer: Yes, SS1H10HE3    B/I has a low reverse leakage current, making it suitable for many applications.

  9. Question: What package type is SS1H10HE3B/I available in?
    Answer: SS1H10HE3    B/I is available in a surface mount SMB package.

  10. Question: Can SS1H10HE3B/I handle high surge currents?
    Answer: Yes, SS1H10HE3    B/I is capable of handling high surge currents, making it suitable for demanding applications.

I hope these questions and answers provide the information you were looking for! If you have any more specific questions, feel free to ask.