The SMCG130AHE3/57T belongs to the category of semiconductor devices, specifically a transient voltage suppressor (TVS) diode.
The SMCG130AHE3/57T typically consists of two pins, with the anode and cathode connections clearly labeled for easy integration into circuit designs.
The SMCG130AHE3/57T operates based on the principle of avalanche breakdown, where it rapidly diverts excess current away from sensitive components when a voltage transient occurs.
The SMCG130AHE3/57T is widely used in various applications including: - Power supply units - Telecommunication equipment - Automotive electronics - Industrial control systems
This comprehensive entry provides a detailed understanding of the SMCG130AHE3/57T, its specifications, functional features, application field plans, and alternative models, making it a valuable resource for engineers and enthusiasts in the field of semiconductor devices.
What is the maximum continuous forward current rating of SMCG130AHE3/57T?
What is the peak pulse power dissipation of SMCG130AHE3/57T?
What is the breakdown voltage of SMCG130AHE3/57T?
What is the typical junction capacitance of SMCG130AHE3/57T?
What are the recommended applications for SMCG130AHE3/57T?
What is the operating temperature range of SMCG130AHE3/57T?
What is the package type of SMCG130AHE3/57T?
What are the key features of SMCG130AHE3/57T?
What are the potential failure modes of SMCG130AHE3/57T?
Are there any application notes or design guidelines available for using SMCG130AHE3/57T in technical solutions?