MBRB20H100CTGHE3/8

Introduction

The MBRB20H100CTGHE3/8 is a diode belonging to the category of Schottky rectifier diodes. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the MBRB20H100CTGHE3/8.

Basic Information Overview

• Category: Schottky Rectifier Diode
• Use: The MBRB20H100CTGHE3/8 is commonly used in power supply applications, voltage clamping, reverse polarity protection, and freewheeling diodes.
• Characteristics: It exhibits low forward voltage drop, high switching speed, and low leakage current.
• Package: TO-263AB (D2PAK)
• Essence: The diode is designed for high-efficiency power conversion and low-loss applications.
• Packaging/Quantity: Available in tape and reel packaging with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 100V
• Current Rating: 20A
• Forward Voltage Drop: Typically 0.75V at 10A
• Reverse Leakage Current: Typically 50µA at 100V
• Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The MBRB20H100CTGHE3/8 follows the standard pin configuration for the TO-263AB package: 1. Anode 2. Cathode 3. Not connected (Tab)

Functional Features

• Low forward voltage drop ensures minimal power loss during conduction.
• High switching speed allows for efficient operation in high-frequency applications.
• Low reverse leakage current minimizes power dissipation in reverse bias conditions.

Advantages and Disadvantages

Advantages

• High efficiency due to low forward voltage drop.
• Fast switching speed enables high-frequency operation.
• Low leakage current reduces power dissipation in reverse bias conditions.

Disadvantages

• Higher cost compared to standard silicon rectifier diodes.
• Sensitivity to overvoltage conditions may require additional protective circuitry.

Working Principles

The MBRB20H100CTGHE3/8 operates based on the Schottky barrier principle, where the metal-semiconductor junction results in lower forward voltage drop compared to conventional PN-junction diodes. When forward biased, the diode conducts with minimal voltage drop, making it suitable for high-efficiency power conversion applications.

Detailed Application Field Plans

The MBRB20H100CTGHE3/8 finds extensive use in the following applications: - Switch-mode power supplies - Voltage clamping circuits - Reverse polarity protection - Freewheeling diodes in inductive load circuits

Detailed and Complete Alternative Models

Some alternative models to the MBRB20H100CTGHE3/8 include: - STPS20H100CT: Similar specifications and package type - IR Schottky Rectifier Series: Various alternatives with comparable characteristics - Vishay Schottky Rectifier Diodes: Offerings with similar performance parameters

In conclusion, the MBRB20H100CTGHE3/8 is a high-performance Schottky rectifier diode suitable for various power supply and voltage clamping applications, offering low forward voltage drop, high switching speed, and low leakage current. Its working principles and detailed application field plans make it a versatile component in electronic designs.

Word Count: 497