GSD2004WS-HE3-18

Introduction

The GSD2004WS-HE3-18 is a semiconductor product belonging to the category of power MOSFETs. This device is designed for use in various electronic applications, offering specific characteristics and features that cater to the needs of different industries. The following entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models related to the GSD2004WS-HE3-18.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring power switching
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252-3 (DPAK)
• Essence: Efficient power management and control
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 200V
• Continuous Drain Current: 20A
• On-Resistance: 45mΩ
• Gate Threshold Voltage: 2.5V
• Maximum Power Dissipation: 2.5W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The GSD2004WS-HE3-18 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Voltage Capability: Allows for use in applications requiring high voltage handling.
• Low On-Resistance: Enables efficient power transfer and minimal power loss during operation.
• Fast Switching Speed: Facilitates rapid switching between on and off states, enhancing overall performance.

Advantages and Disadvantages

Advantages

• Enhanced Power Management: Suitable for demanding power control applications.
• Low Power Loss: Efficient design contributes to energy conservation.
• Reliable Performance: Ensures stable operation under varying conditions.

Disadvantages

• Sensitivity to Overvoltage: Requires additional protection circuitry in high-voltage environments.
• Heat Dissipation: May necessitate heat sinks in certain high-power applications.

Working Principles

The GSD2004WS-HE3-18 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the semiconductor material. When a sufficient gate voltage is applied, the device allows current to flow between the drain and source terminals, effectively controlling the power flow in the circuit.

Detailed Application Field Plans

The GSD2004WS-HE3-18 finds extensive use in various applications, including but not limited to: - Switching Power Supplies - Motor Control Systems - Inverters and Converters - LED Lighting Systems - Automotive Electronics

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative models to the GSD2004WS-HE3-18 include: - IRF1010EZPbF - FDPF33N25T - STP80NF55-06

In conclusion, the GSD2004WS-HE3-18 power MOSFET offers a robust solution for power management and control in diverse electronic applications. With its high voltage capability, low on-resistance, and fast switching speed, it caters to the needs of various industries while providing reliable and efficient performance.

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