Vishay Semiconductor Diodes Division
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BZT55A9V1-GS18

BZT55A9V1-GS18

Introduction

The BZT55A9V1-GS18 is a voltage regulator diode that belongs to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Semiconductor Devices
  • Use: Voltage Regulation
  • Characteristics: Low forward voltage drop, high current capability
  • Package: SOD-123
  • Essence: Regulating voltage in electronic circuits
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

  • Voltage: 9.1V
  • Power Dissipation: 500mW
  • Forward Current: 200mA
  • Operating Temperature Range: -65°C to +150°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The BZT55A9V1-GS18 has three pins: 1. Anode 2. Cathode 3. Not connected (NC)

Functional Features

  • Voltage Regulation: Provides a stable output voltage of 9.1V
  • Low Forward Voltage Drop: Ensures minimal power loss
  • High Current Capability: Can handle currents up to 200mA

Advantages and Disadvantages

Advantages

  • Precise voltage regulation
  • Low power dissipation
  • Compact SOD-123 package

Disadvantages

  • Limited maximum current handling capacity
  • Sensitivity to temperature variations

Working Principles

The BZT55A9V1-GS18 operates based on the principle of zener breakdown, where it maintains a constant voltage across its terminals by conducting in reverse bias when the applied voltage reaches its breakdown voltage.

Detailed Application Field Plans

The BZT55A9V1-GS18 is commonly used in the following applications: - Voltage regulation in power supplies - Overvoltage protection in electronic circuits - Signal clamping and limiting

Detailed and Complete Alternative Models

Some alternative models to the BZT55A9V1-GS18 include: - BZX84C9V1 - 1N4739A - LM431

In conclusion, the BZT55A9V1-GS18 is a voltage regulator diode with specific characteristics and applications. Its precise voltage regulation and compact package make it suitable for various electronic circuits, despite its limitations in current handling and temperature sensitivity.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BZT55A9V1-GS18 v technických řešeních

  1. What is the maximum power dissipation of BZT55A9V1-GS18?

    • The maximum power dissipation of BZT55A9V1-GS18 is 500mW.

  2. What is the forward voltage drop of BZT55A9V1-GS18?

    • The forward voltage drop of BZT55A9V1-GS18 is typically 0.9V at a forward current of 5mA.

  3. What is the reverse standoff voltage of BZT55A9V1-GS18?

    • The reverse standoff voltage of BZT55A9V1-GS18 is 9.1V.

  4. What is the maximum reverse leakage current of BZT55A9V1-GS18?

    • The maximum reverse leakage current of BZT55A9V1-GS18 is 0.1µA at the reverse voltage of 7V.

  5. Is BZT55A9V1-GS18 suitable for overvoltage protection in electronic circuits?

    • Yes, BZT55A9V1-GS18 is commonly used for overvoltage protection due to its Zener diode characteristics.

  6. Can BZT55A9V1-GS18 be used in voltage regulation applications?

    • Yes, BZT55A9V1-GS18 can be used for simple voltage regulation tasks within its specified parameters.

  7. What is the temperature coefficient of BZT55A9V1-GS18?

    • The temperature coefficient of BZT55A9V1-GS18 is approximately 5mV/°C.

  8. What are the typical applications of BZT55A9V1-GS18 in technical solutions?

    • BZT55A9V1-GS18 is commonly used in voltage clamping, voltage regulation, and overvoltage protection in various electronic circuits.

  9. What is the package type of BZT55A9V1-GS18?

    • BZT55A9V1-GS18 is available in a SOD-123 surface mount package.

  10. What are the storage and operating temperature ranges for BZT55A9V1-GS18?

    • The storage temperature range for BZT55A9V1-GS18 is -65°C to +175°C, and the operating temperature range is -65°C to +150°C.