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BZT52B12-HE3-18
Introduction
The BZT52B12-HE3-18 is a semiconductor product belonging to the category of Zener diodes. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Basic Information Overview
- Category: Zener Diode
- Use: Voltage regulation and protection in electronic circuits
- Characteristics: Precise voltage regulation, low leakage current, small package size
- Package: SOD-123
- Essence: Semiconductor material with a specific reverse breakdown voltage
- Packaging/Quantity: Available in tape and reel packaging, quantity varies by manufacturer
Specifications
- Voltage: 12V
- Power Dissipation: 350mW
- Operating Temperature Range: -65°C to +150°C
- Zener Impedance: 20Ω
- Maximum Reverse Leakage Current: 100nA
Detailed Pin Configuration
The BZT52B12-HE3-18 Zener diode has two pins, typically denoted as Anode (A) and Cathode (K).
Functional Features
- Voltage Regulation: Maintains a constant output voltage under varying load conditions
- Overvoltage Protection: Safeguards sensitive components in the circuit from voltage spikes
- Stability: Provides stable voltage reference for precision applications
Advantages and Disadvantages
Advantages
- Precise voltage regulation
- Small package size
- Low leakage current
Disadvantages
- Limited power dissipation capability
- Sensitivity to temperature variations
Working Principles
The BZT52B12-HE3-18 operates based on the principle of the Zener effect, where it maintains a nearly constant voltage across its terminals when reverse biased at or above its breakdown voltage.
Detailed Application Field Plans
The BZT52B12-HE3-18 finds extensive use in various electronic circuits such as: - Voltage regulators - Overvoltage protection circuits - Signal clamping circuits - Precision voltage references
Detailed and Complete Alternative Models
Some alternative models to the BZT52B12-HE3-18 include: - BZX84C12 - MMBZ5232B - 1N4742A - MM3Z12VT1G
In conclusion, the BZT52B12-HE3-18 Zener diode offers precise voltage regulation and overvoltage protection in a compact package, making it suitable for a wide range of electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BZT52B12-HE3-18 v technických řešeních
What is the maximum power dissipation of BZT52B12-HE3-18?
- The maximum power dissipation of BZT52B12-HE3-18 is 300mW.
What is the forward voltage drop of BZT52B12-HE3-18?
- The forward voltage drop of BZT52B12-HE3-18 is typically 0.9V at a forward current of 20mA.
What is the reverse standoff voltage of BZT52B12-HE3-18?
- The reverse standoff voltage of BZT52B12-HE3-18 is 12V.
What is the maximum reverse leakage current of BZT52B12-HE3-18?
- The maximum reverse leakage current of BZT52B12-HE3-18 is 100nA at the reverse voltage of 10V.
What is the operating temperature range of BZT52B12-HE3-18?
- The operating temperature range of BZT52B12-HE3-18 is -65°C to +150°C.
Is BZT52B12-HE3-18 RoHS compliant?
- Yes, BZT52B12-HE3-18 is RoHS compliant.
What is the package type of BZT52B12-HE3-18?
- BZT52B12-HE3-18 comes in a SOD-123 package.
Can BZT52B12-HE3-18 be used for voltage regulation in low-power applications?
- Yes, BZT52B12-HE3-18 can be used for voltage regulation in low-power applications.
What are some typical applications of BZT52B12-HE3-18?
- Some typical applications of BZT52B12-HE3-18 include voltage clamping, overvoltage protection, and signal conditioning.
What are the key differences between BZT52B12-HE3-18 and similar Zener diodes?
- The key differences include its maximum power dissipation, forward voltage drop, and reverse standoff voltage, which make it suitable for specific technical solutions.