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1N6283AHE3_A/C

1N6283AHE3_A/C

Product Overview

The 1N6283AHE3_A/C is a high-performance rectifier diode designed for use in various electronic applications. This semiconductor device belongs to the category of power rectifiers and is commonly used in power supply circuits, voltage regulators, and other electronic systems requiring efficient rectification.

Basic Information

  • Category: Power Rectifier Diode
  • Use: Rectification in power supply circuits and voltage regulators
  • Characteristics: High current capability, low forward voltage drop
  • Package: Axial leaded package
  • Essence: Efficient rectification of alternating current (AC) to direct current (DC)
  • Packaging/Quantity: Available in bulk packaging with varying quantities

Specifications

  • Maximum Average Forward Current: 6A
  • Peak Repetitive Reverse Voltage: 200V
  • Forward Voltage Drop: 1.1V at 3A
  • Reverse Leakage Current: 10µA
  • Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N6283AHE3_A/C features an axial leaded package with two leads. The pin configuration is as follows: - Pin 1: Anode - Pin 2: Cathode

Functional Features

  • High current capability for efficient power rectification
  • Low forward voltage drop minimizes power loss
  • Fast reverse recovery time for improved performance

Advantages and Disadvantages

Advantages

  • High current handling capability
  • Low forward voltage drop
  • Fast reverse recovery time

Disadvantages

  • Relatively higher reverse leakage current compared to some alternative models
  • Limited peak repetitive reverse voltage

Working Principles

The 1N6283AHE3_A/C operates based on the principle of rectification, where it allows current flow in only one direction, converting AC to DC. When forward biased, it conducts current with minimal voltage drop, while blocking reverse current flow when reverse biased.

Detailed Application Field Plans

The 1N6283AHE3_A/C is widely used in various applications, including: - Power supply circuits - Voltage regulators - Battery chargers - Motor drives - Inverters

Detailed and Complete Alternative Models

Some alternative models to the 1N6283AHE3_A/C include: - 1N4007: General-purpose rectifier diode - 1N5408: High current rectifier diode - FR207: Fast recovery rectifier diode - UF4007: Ultrafast rectifier diode

In conclusion, the 1N6283AHE3_A/C is a versatile power rectifier diode with high current capability and low forward voltage drop, making it suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N6283AHE3_A/C v technických řešeních

Sure, here are 10 common questions and answers related to the application of 1N6283AHE3_A/C in technical solutions:

  1. What is the maximum repetitive peak reverse voltage of 1N6283AHE3_A/C?

    • The maximum repetitive peak reverse voltage is 200V.
  2. What is the average forward current rating of 1N6283AHE3_A/C?

    • The average forward current rating is 6A.
  3. What is the typical junction capacitance of 1N6283AHE3_A/C?

    • The typical junction capacitance is 50pF.
  4. Can 1N6283AHE3_A/C be used in high-frequency applications?

    • Yes, it can be used in high-frequency applications due to its fast switching capability.
  5. What is the operating temperature range of 1N6283AHE3_A/C?

    • The operating temperature range is -65°C to +175°C.
  6. Is 1N6283AHE3_A/C suitable for use in power supply circuits?

    • Yes, it is suitable for use in power supply circuits due to its high current capability.
  7. Does 1N6283AHE3_A/C have a low leakage current?

    • Yes, it has a low leakage current which makes it suitable for precision applications.
  8. Can 1N6283AHE3_A/C be used in automotive electronics?

    • Yes, it is designed to meet the requirements of automotive electronics applications.
  9. What is the package type of 1N6283AHE3_A/C?

    • It comes in a DO-203AB (DO-5) package.
  10. Is 1N6283AHE3_A/C RoHS compliant?

    • Yes, it is RoHS compliant, making it suitable for environmentally friendly designs.