F28M35M20B1RFPT

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: RF Power Transistor
• Characteristics:
  • High power handling capability
  • Wide frequency range
  • Low noise figure
  • High gain
• Package: B1RFPT package
• Essence: This product is a high-performance RF power transistor designed for various applications requiring high power amplification in the radio frequency range.
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements.

Specifications

• Frequency Range: 2.5 GHz - 3.5 GHz
• Output Power: 20 Watts
• Gain: 15 dB
• Efficiency: 60%
• Input Impedance: 50 Ohms
• Operating Voltage: 12 V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The F28M35M20B1RFPT has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | GND | Ground | | 2 | Vcc | Supply Voltage | | 3 | RF IN | RF Input | | 4 | RF OUT | RF Output |

Functional Features

• High power handling capability allows for efficient amplification of RF signals.
• Wide frequency range enables versatile use in different RF applications.
• Low noise figure ensures minimal signal degradation during amplification.
• High gain provides significant signal amplification.
• The B1RFPT package offers good thermal dissipation and mechanical protection.

Advantages

• High power handling capability allows for reliable operation in demanding RF applications.
• Wide frequency range makes it suitable for various wireless communication systems.
• Low noise figure ensures high signal quality during amplification.
• High gain provides significant signal amplification, reducing the need for additional amplification stages.
• The B1RFPT package offers good thermal dissipation and mechanical protection, enhancing product reliability.

Disadvantages

• Limited operating voltage range may restrict its use in certain applications.
• Operating temperature range may not be suitable for extreme environmental conditions.
• Availability of alternative models with different specifications may limit customization options.

Working Principles

The F28M35M20B1RFPT operates based on the principles of RF power amplification. It takes an input RF signal and amplifies it to a higher power level while maintaining signal integrity. This is achieved through the use of active semiconductor devices and appropriate biasing techniques.

Detailed Application Field Plans

The F28M35M20B1RFPT is commonly used in the following application fields: 1. Wireless Communication Systems: Used in base stations, repeaters, and transceivers for amplifying RF signals. 2. Radar Systems: Employed in radar transmitters for high-power RF amplification. 3. Satellite Communication: Used in satellite uplink systems for amplifying RF signals before transmission. 4. Industrial Applications: Applied in industrial RF heating systems and plasma generators.

Detailed and Complete Alternative Models

1. F28M35M10B1RFPT: Similar to F28M35M20B1RFPT but with a lower output power of 10 Watts.
2. F28M35M30B1RFPT: Similar to F28M35M20B1RFPT but with a higher output power of 30 Watts.
3. F28M35M20B2RFPT: Similar to F28M35M20B1RFPT but with a different pin configuration.

Note: Please refer to the manufacturer's datasheet for complete information on alternative models.

This entry provides an overview of the F28M35M20B1RFPT RF power transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.