P4KE51CAHB0G Encyclopedia Entry

Product Overview

Use

This TVS diode is used to protect electronic circuits from voltage spikes and transients.

Characteristics

Package: DO-41
Essence: Silicon junction diode
Packaging/Quantity: Typically available in reels of 2000 units

Specifications

Peak Pulse Power: 400W
Breakdown Voltage: 43.6V
Clamping Voltage: 77.4V
Maximum Reverse Leakage Current: 1μA
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The P4KE51CAHB0G TVS diode has a standard DO-41 package with two leads. The anode is connected to one lead, while the cathode is connected to the other lead.

Functional Features

Provides protection against voltage surges and transients
Fast response time
Low clamping voltage
High surge capability

Advantages and Disadvantages

Advantages

Effective protection for sensitive electronic components
Fast response time helps prevent damage to circuits
Low clamping voltage ensures minimal impact on protected circuits

Disadvantages

Limited power dissipation capability compared to larger TVS diodes
May require additional circuitry for comprehensive surge protection in high-power applications

Working Principles

When a voltage surge occurs, the TVS diode conducts current to divert the excess energy away from the protected circuit. This action effectively clamps the voltage to a safe level, safeguarding the connected components.

Detailed Application Field Plans

The P4KE51CAHB0G TVS diode is commonly used in various electronic systems, including: - Power supplies - Communication equipment - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

P4KE6.8CAHB0G
P4KE10CAHB0G
P4KE18CAHB0G
P4KE30CAHB0G
P4KE36CAHB0G

In conclusion, the P4KE51CAHB0G TVS diode offers effective protection against voltage surges and transients in a compact DO-41 package, making it suitable for a wide range of electronic applications.

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