Taiwan Semiconductor Corporation
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MBRF3050CTHC0G
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MBRF3050CTHC0G

Introduction

The MBRF3050CTHC0G belongs to the category of Schottky Rectifier Diodes. This entry provides a comprehensive overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the MBRF3050CTHC0G.

Basic Information Overview

  • Category: Schottky Rectifier Diode
  • Use: The MBRF3050CTHC0G is used as a rectifier in power supply applications, switching power supplies, and other high-frequency applications.
  • Characteristics: It exhibits low forward voltage drop and fast switching capabilities, making it suitable for high-efficiency applications.
  • Package: The diode is typically available in a TO-220AB package.
  • Essence: The essence of the MBRF3050CTHC0G lies in its ability to provide efficient rectification and fast switching.
  • Packaging/Quantity: It is commonly packaged in reels or tubes containing multiple units.

Specifications

  • Forward Voltage Drop: Typically around 0.55V at 15A
  • Reverse Voltage: 50V
  • Average Rectified Current: 30A
  • Operating Temperature Range: -65°C to +175°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The MBRF3050CTHC0G typically has three pins: 1. Anode 2. Cathode 3. Heatsink tab (connected to the cathode)

Functional Features

  • Low forward voltage drop
  • Fast switching speed
  • High current capability
  • Excellent thermal performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Fast response time
  • Low power dissipation
  • Compact design

Disadvantages

  • Higher cost compared to standard rectifier diodes
  • Sensitive to overvoltage conditions

Working Principles

The MBRF3050CTHC0G operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.

Detailed Application Field Plans

The MBRF3050CTHC0G is widely used in the following applications: - Switching power supplies - DC-DC converters - Motor drive circuits - Solar panel bypass diodes - Reverse polarity protection circuits

Detailed and Complete Alternative Models

Some alternative models to the MBRF3050CTHC0G include: - MBRF30100CTHC0G - MBRF3030CTHC0G - MBRF3060CTHC0G - MBRF3080CTHC0G

In conclusion, the MBRF3050CTHC0G is a highly efficient Schottky rectifier diode with fast switching characteristics, making it suitable for various power supply and high-frequency applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MBRF3050CTHC0G v technických řešeních

  1. What is the MBRF3050CTHC0G?

    • The MBRF3050CTHC0G is a Schottky barrier rectifier designed for high frequency and high power applications.

  2. What are the key features of the MBRF3050CTHC0G?

    • The key features include low forward voltage drop, high current capability, and high surge capacity.

  3. What are the typical applications of the MBRF3050CTHC0G?

    • Typical applications include switch mode power supplies, freewheeling diodes, and reverse battery protection.

  4. What is the maximum forward voltage of the MBRF3050CTHC0G?

    • The maximum forward voltage is typically around 0.65V at 15A.

  5. What is the maximum reverse voltage of the MBRF3050CTHC0G?

    • The maximum reverse voltage is 50V.

  6. What is the operating temperature range of the MBRF3050CTHC0G?

    • The operating temperature range is typically -65°C to +175°C.

  7. What is the package type of the MBRF3050CTHC0G?

    • The package type is TO-220AB.

  8. What are the thermal characteristics of the MBRF3050CTHC0G?

    • The thermal resistance from junction to case is typically 3.0°C/W.

  9. What are the recommended storage conditions for the MBRF3050CTHC0G?

    • It is recommended to store the device in an antistatic bag at temperatures between -55°C and +175°C.

  10. Are there any specific layout considerations when using the MBRF3050CTHC0G?

    • It is important to minimize the length and area of high current traces and provide adequate heat sinking for optimal performance.