ES1LDHR3G Product Overview

Introduction

The ES1LDHR3G is a high-performance semiconductor diode belonging to the category of Schottky diodes. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Diode
• Use: Rectification and voltage clamping in various electronic circuits
• Characteristics: High current capability, low forward voltage drop, fast switching speed
• Package: SOD-123FL
• Essence: Schottky diode with enhanced performance
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Forward Voltage Drop (VF): 0.35V at 1A
• Reverse Voltage (VR): 30V
• Average Rectified Current (IO): 1A
• Peak Forward Surge Current (IFSM): 30A
• Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The ES1LDHR3G has a standard SOD-123FL package with two pins. The cathode is connected to the first pin, while the anode is connected to the second pin.

Functional Features

• Fast Switching Speed: Enables rapid response in electronic circuits.
• Low Forward Voltage Drop: Reduces power dissipation and improves efficiency.
• High Current Capability: Suitable for applications requiring high current handling.

Advantages and Disadvantages

Advantages

• Enhanced Performance: Offers improved characteristics compared to standard diodes.
• Compact Package: SOD-123FL package allows for space-efficient designs.
• Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Disadvantages

• Higher Cost: Enhanced performance may result in a higher price point.
• Limited Reverse Voltage: VR rating of 30V may not be suitable for high-voltage applications.

Working Principles

The ES1LDHR3G operates based on the Schottky barrier principle, where the metal-semiconductor junction results in lower forward voltage drop and faster switching characteristics compared to conventional PN-junction diodes.

Detailed Application Field Plans

The ES1LDHR3G is well-suited for various applications, including: - Power Supplies - Voltage Clamping Circuits - Reverse Polarity Protection - Switching Power Supplies - LED Lighting

Detailed and Complete Alternative Models

• ES2LDHR3G: Higher reverse voltage (40V) variant of ES1LDHR3G
• ES3LDHR3G: Lower forward voltage drop variant for ultra-low power loss applications
• ES1LDHR5G: Higher average rectified current (1.5A) variant for increased current handling capacity

In conclusion, the ES1LDHR3G Schottky diode offers enhanced performance and reliability, making it suitable for a wide range of electronic applications.

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