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1PGSMA4747HR3G
Product Overview
1PGSMA4747HR3G belongs to the category of semiconductor devices and is specifically used as a high-power, surface mount silicon rectifier for general-purpose applications. This diode exhibits characteristics such as high current capability, low forward voltage drop, and high surge capability. It is typically packaged in a small, surface-mount package and is available in various packaging quantities.
Specifications
- Part Number: 1PGSMA4747HR3G
- Category: Semiconductor Devices
- Use: High-power silicon rectifier for general-purpose applications
- Characteristics: High current capability, low forward voltage drop, high surge capability
- Package: Surface-mount package
- Packaging/Quantity: Various options available
Detailed Pin Configuration
The detailed pin configuration for 1PGSMA4747HR3G includes the identification of the anode and cathode terminals, as well as any additional terminals for specific applications.
Functional Features
1PGSMA4747HR3G offers efficient rectification of high-power electrical signals, making it suitable for a wide range of general-purpose applications. Its high surge capability ensures reliable performance under transient conditions.
Advantages and Disadvantages
Advantages
- High current capability
- Low forward voltage drop
- High surge capability
Disadvantages
- May require heat sinking in high-power applications
- Sensitive to reverse voltage conditions
Working Principles
1PGSMA4747HR3G operates based on the principles of semiconductor rectification, allowing it to efficiently convert alternating current (AC) into direct current (DC) while minimizing voltage drops and maximizing surge tolerance.
Detailed Application Field Plans
1PGSMA4747HR3G finds extensive use in power supply units, battery chargers, inverters, and other electronic systems where high-power rectification is essential. Its reliability and efficiency make it suitable for both industrial and consumer electronics applications.
Detailed and Complete Alternative Models
For users seeking alternative models with similar characteristics, alternatives such as 1N5822, 1N4007, and UF4007 can be considered. These alternatives offer comparable performance in terms of current capability, forward voltage drop, and surge capability.
In conclusion, 1PGSMA4747HR3G serves as a reliable high-power silicon rectifier with versatile applications across various electronic systems. Its robust characteristics and efficient operation make it a valuable component in modern electronics design.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1PGSMA4747HR3G v technických řešeních
What is 1PGSMA4747HR3G?
- 1PGSMA4747HR3G is a surface mount silicon PIN diode designed for high-speed switching applications.
What are the key features of 1PGSMA4747HR3G?
- The key features include low capacitance, low series resistance, and high isolation.
What are the typical applications of 1PGSMA4747HR3G?
- Typical applications include RF switches, attenuators, phase shifters, and microwave frequency multipliers.
What is the maximum power dissipation of 1PGSMA4747HR3G?
- The maximum power dissipation is typically 100mW.
What is the forward voltage of 1PGSMA4747HR3G?
- The forward voltage at 10mA is typically 0.95V.
What is the reverse breakdown voltage of 1PGSMA4747HR3G?
- The reverse breakdown voltage is typically 15V.
What is the operating temperature range of 1PGSMA4747HR3G?
- The operating temperature range is typically -65°C to +150°C.
What is the package type of 1PGSMA4747HR3G?
- It is available in a surface mount package.
What are the recommended storage conditions for 1PGSMA4747HR3G?
- It should be stored in a dry and nitrogen-purged environment at temperatures not exceeding 40°C.
Are there any specific handling precautions for 1PGSMA4747HR3G?
- Yes, it should be handled with proper ESD precautions and should not be subjected to mechanical stress during assembly.