Taiwan Semiconductor Corporation
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1N5817HB0G
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1N5817HB0G - Diode Encyclopedia Entry

Introduction

The 1N5817HB0G is a diode belonging to the category of Schottky diodes. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Schottky diode
  • Use: Rectification in power supply circuits, reverse polarity protection, and low voltage drop applications.
  • Characteristics: Low forward voltage drop, fast switching speed, and low leakage current.
  • Package: SMB (DO-214AA)
  • Essence: High efficiency rectification and voltage clamping.
  • Packaging/Quantity: Available in tape and reel packaging with varying quantities.

Specifications

  • Forward Voltage Drop: Typically 0.45V at 1A
  • Reverse Voltage: 20V
  • Forward Current: 1A
  • Operating Temperature Range: -65°C to +125°C
  • Storage Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The 1N5817HB0G has two pins: 1. Anode (A) - Connected to the positive terminal of the circuit. 2. Cathode (K) - Connected to the negative terminal of the circuit.

Functional Features

  • Fast switching speed allows for efficient rectification.
  • Low forward voltage drop minimizes power loss.
  • Low leakage current enhances performance in low power applications.

Advantages and Disadvantages

Advantages

  • Low forward voltage drop reduces power dissipation.
  • Fast switching speed enables high-frequency operation.
  • Low leakage current ensures minimal power loss in standby mode.

Disadvantages

  • Limited reverse voltage capability compared to other diode types.
  • Susceptible to thermal runaway at high currents and temperatures.

Working Principles

The 1N5817HB0G operates based on the Schottky barrier principle, where the metal-semiconductor junction results in a lower forward voltage drop compared to standard PN-junction diodes. When forward biased, it allows current flow with minimal voltage drop, making it suitable for high-efficiency rectification.

Detailed Application Field Plans

  1. Power Supply Circuits: Used for rectification and reverse polarity protection in DC power supplies.
  2. Voltage Clamping: Protects sensitive components from voltage spikes in electronic circuits.
  3. Low Voltage Drop Applications: Ideal for applications requiring minimal power loss, such as battery-powered devices.

Detailed and Complete Alternative Models

  1. 1N5819HB0G: Higher reverse voltage (40V) variant for increased voltage protection.
  2. 1N5822HB0G: Higher current (3A) variant for applications requiring higher current handling capacity.
  3. SS14: General-purpose Schottky diode with similar characteristics for cost-effective solutions.

In conclusion, the 1N5817HB0G Schottky diode offers fast switching speed, low forward voltage drop, and low leakage current, making it suitable for various power supply and voltage clamping applications. Understanding its specifications, pin configuration, functional features, and alternatives provides valuable insights for its effective utilization in electronic designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N5817HB0G v technických řešeních

  1. What is the 1N5817HB0G diode used for?

    • The 1N5817HB0G diode is commonly used in rectifier circuits to convert alternating current (AC) to direct current (DC).

  2. What are the key specifications of the 1N5817HB0G diode?

    • The 1N5817HB0G diode typically has a maximum forward voltage of 1V, a maximum reverse voltage of 20V, and a maximum forward current of 1A.

  3. Can the 1N5817HB0G diode be used for voltage regulation?

    • While the 1N5817HB0G diode can be used in voltage regulation circuits, it is more commonly utilized as a rectifier due to its low forward voltage drop.

  4. What are the typical applications of the 1N5817HB0G diode?

    • The 1N5817HB0G diode is often used in power supplies, battery chargers, voltage converters, and other electronic devices requiring rectification.

  5. Is the 1N5817HB0G diode suitable for high-frequency applications?

    • The 1N5817HB0G diode is not specifically designed for high-frequency applications, but it can function adequately at moderate frequencies.

  6. What are the temperature considerations for the 1N5817HB0G diode?

    • The 1N5817HB0G diode typically operates within a temperature range of -65°C to +125°C, making it suitable for a wide range of environments.

  7. Can the 1N5817HB0G diode handle surge currents?

    • The 1N5817HB0G diode has a moderate surge current capability, making it suitable for handling short-term overloads in circuits.

  8. Are there any special mounting or handling considerations for the 1N5817HB0G diode?

    • The 1N5817HB0G diode is typically available in surface mount packages, so proper soldering techniques and thermal management should be considered during installation.

  9. What are the potential failure modes of the 1N5817HB0G diode?

    • Common failure modes for the 1N5817HB0G diode include overvoltage breakdown, excessive forward current, and thermal overstress.

  10. Where can I find detailed technical information about the 1N5817HB0G diode?

    • Detailed technical information about the 1N5817HB0G diode can be found in the manufacturer's datasheet, which includes electrical characteristics, package dimensions, and application notes.