STW7N90K5 - Semiconductor Device Encyclopedia Entry

Introduction

The STW7N90K5 is a semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the STW7N90K5.

Basic Information Overview

• Category: Power MOSFET
• Use: The STW7N90K5 is used as a high-voltage N-channel enhancement-mode power MOSFET designed for high-speed switching applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for use in power supplies, motor control, and other high-frequency switching applications.
• Package: The STW7N90K5 is typically available in a TO-247 package.
• Essence: Its essence lies in providing efficient and reliable high-voltage switching capabilities.
• Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for production or prototyping purposes.

Specifications

• Voltage Rating: 900V
• Current Rating: 7A
• On-State Resistance: 1.4Ω
• Gate-Source Voltage (Max): ±30V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-247

Detailed Pin Configuration

The STW7N90K5 typically has three pins: 1. Gate (G): Input terminal for controlling the switching action of the MOSFET. 2. Drain (D): Output terminal through which the main current flows during operation. 3. Source (S): Terminal connected to the ground reference potential.

Functional Features

• High-Speed Switching: Enables rapid on/off transitions, suitable for high-frequency applications.
• Low On-State Resistance: Minimizes power dissipation and improves efficiency.
• Low Gate Charge: Facilitates fast and efficient control of the MOSFET.

Advantages and Disadvantages

Advantages

• High voltage rating suitable for demanding applications.
• Low on-state resistance for improved efficiency.
• Fast switching speed for high-frequency operation.

Disadvantages

• Higher gate-source voltage requirement compared to some alternative models.
• Limited current rating compared to higher-power devices.

Working Principles

The STW7N90K5 operates based on the principles of field-effect transistors, utilizing the electric field at the gate terminal to control the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET enters the conducting state, allowing current to flow through it.

Detailed Application Field Plans

The STW7N90K5 finds application in various fields, including: - Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation. - Motor Control: Used in motor drive circuits for precise and efficient control of electric motors. - High-Frequency Converters: Employed in high-frequency converters for power electronics applications.

Detailed and Complete Alternative Models

Some alternative models to the STW7N90K5 include: - STP7NK80ZFP: A similar N-channel power MOSFET with a lower on-state resistance. - IRFP4568PBF: An alternative high-voltage MOSFET with comparable characteristics. - IXFN70N60: Another option for high-voltage, high-speed switching applications.

In conclusion, the STW7N90K5 is a high-voltage N-channel power MOSFET with excellent switching characteristics, making it suitable for a range of high-frequency and high-power applications.

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