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STW56N65DM2
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STW56N65DM2

Product Overview

Category

The STW56N65DM2 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STW56N65DM2 is typically available in a TO-247 package.

Essence

This MOSFET is essential for power electronics and high-voltage applications.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 56A
  • On-Resistance (RDS(on)): 0.065Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STW56N65DM2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low input capacitance enables fast switching
  • Low on-resistance minimizes power loss and heat generation

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Higher cost compared to lower voltage MOSFETs
  • May require additional circuitry for driving due to higher gate-source voltage

Working Principles

The STW56N65DM2 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STW56N65DM2 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - High-voltage DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the STW56N65DM2 include: - STP60NF06FP - IRFP4668 - FDPF51N25

In conclusion, the STW56N65DM2 is a high-voltage power MOSFET with excellent characteristics suitable for various power electronics applications. Its high voltage capability, fast switching speed, and low on-resistance make it a popular choice for demanding high-power applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STW56N65DM2 v technických řešeních

  1. What is the maximum drain-source voltage rating of STW56N65DM2?

    • The maximum drain-source voltage rating of STW56N65DM2 is 650V.

  2. What is the continuous drain current rating of STW56N65DM2?

    • The continuous drain current rating of STW56N65DM2 is 56A.

  3. What is the on-resistance of STW56N65DM2?

    • The on-resistance of STW56N65DM2 is typically 0.038 ohms.

  4. What is the gate threshold voltage of STW56N65DM2?

    • The gate threshold voltage of STW56N65DM2 is typically 3V.

  5. What are the typical applications for STW56N65DM2?

    • STW56N65DM2 is commonly used in high-power switching applications such as power supplies, motor control, and inverters.

  6. What is the maximum junction temperature of STW56N65DM2?

    • The maximum junction temperature of STW56N65DM2 is 150°C.

  7. Does STW56N65DM2 require a heatsink for operation?

    • Yes, STW56N65DM2 typically requires a heatsink for efficient heat dissipation.

  8. What is the input capacitance of STW56N65DM2?

    • The input capacitance of STW56N65DM2 is typically 3200pF.

  9. Is STW56N65DM2 suitable for use in automotive applications?

    • Yes, STW56N65DM2 is suitable for use in automotive applications due to its high voltage and current ratings.

  10. What are the recommended gate driver specifications for STW56N65DM2?

    • It is recommended to use a gate driver capable of providing sufficient voltage and current to drive the MOSFET effectively, typically with fast rise and fall times for optimal performance.