STW31N65M5 - Power MOSFET

Basic Information Overview

• Category: Power semiconductor device
• Use: Used as a switch in power electronics applications
• Characteristics: High voltage, low on-resistance, high switching speed
• Package: TO-247
• Essence: Efficient power management
• Packaging/Quantity: Typically sold individually or in small quantities

Specifications

• Voltage Rating: 650V
• Current Rating: 31A
• On-Resistance: 0.065 ohms
• Gate Threshold Voltage: 3V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STW31N65M5 has a standard TO-247 pin configuration with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Connects to the load and the power supply 3. Source (S): Connected to the ground reference

Functional Features

• High voltage capability
• Low input capacitance
• Fast switching speed
• Low gate charge
• Avalanche ruggedness

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high-power applications
• Low on-resistance reduces power dissipation

Disadvantages

• Higher cost compared to lower voltage MOSFETs
• Requires careful handling due to high voltage rating

Working Principles

The STW31N65M5 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow through.

Detailed Application Field Plans

The STW31N65M5 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the STW31N65M5 include: - IRFP4668PbF - FDPF33N25T - IXFN38N100Q2

This completes the entry for the STW31N65M5 Power MOSFET, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Word Count: 298