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STW24NM65N

STW24NM65N

Introduction

STW24NM65N is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Used for power management and control in electronic circuits
  • Characteristics: High voltage capability, low input capacitance, fast switching speed
  • Package: TO-247
  • Essence: Efficient power handling and control
  • Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

  • Voltage Rating: 650V
  • Current Rating: 24A
  • On-state Resistance (RDS(on)): 0.19 Ohm
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STW24NM65N typically has three pins: 1. Gate (G): Input pin for controlling the switching operation 2. Drain (D): Output pin connected to the load 3. Source (S): Ground reference for the MOSFET

Functional Features

  • Fast switching speed for efficient power control
  • Low input capacitance for reduced switching losses
  • High voltage capability for versatile applications
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • High voltage capability allows for use in diverse applications
  • Low input capacitance reduces switching losses
  • Fast switching speed enhances efficiency

Disadvantages

  • Higher on-state resistance compared to some alternative models
  • Limited current rating for high-power applications

Working Principles

STW24NM65N operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

STW24NM65N finds extensive use in various applications, including: - Switching power supplies - Motor control systems - LED lighting - Solar inverters - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to STW24NM65N include: - IRFP460: Similar voltage and current ratings - FDPF33N25: Lower on-state resistance - IXFN38N100: Higher current rating

In conclusion, STW24NM65N is a versatile power MOSFET with excellent voltage capability, fast switching speed, and low input capacitance, making it suitable for a wide range of power management and control applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STW24NM65N v technických řešeních

  1. What is STW24NM65N?

    • STW24NM65N is a N-channel Power MOSFET designed for high efficiency and power density applications.
  2. What are the key features of STW24NM65N?

    • The key features include low on-resistance, fast switching speed, low gate charge, and high avalanche ruggedness.
  3. What are the typical applications of STW24NM65N?

    • Typical applications include switched mode power supplies (SMPS), motor control, lighting, and automotive systems.
  4. What is the maximum drain-source voltage rating of STW24NM65N?

    • The maximum drain-source voltage rating is 650V.
  5. What is the typical on-resistance of STW24NM65N?

    • The typical on-resistance is around 0.12 ohms.
  6. What is the maximum continuous drain current of STW24NM65N?

    • The maximum continuous drain current is 24A.
  7. Does STW24NM65N have built-in protection features?

    • Yes, it has built-in protection against overcurrent, overtemperature, and undervoltage lockout.
  8. What is the operating temperature range of STW24NM65N?

    • The operating temperature range is typically -55°C to 150°C.
  9. Is STW24NM65N suitable for high-frequency applications?

    • Yes, it is suitable for high-frequency applications due to its fast switching speed and low gate charge.
  10. Can STW24NM65N be used in automotive applications?

    • Yes, it is suitable for automotive applications such as motor control and power distribution.