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STW14NM65N

STW14NM65N

Introduction

STW14NM65N is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low input capacitance, fast switching speed
  • Package: TO-247
  • Essence: Efficient power management
  • Packaging/Quantity: Typically sold in reels or tubes

Specifications

  • Voltage Rating: 650V
  • Current Rating: 14A
  • On-state Resistance (RDS(on)): 0.19 Ohms
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STW14NM65N features a standard TO-247 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability for power applications
  • Low input capacitance for improved efficiency
  • Fast switching speed for reduced power loss

Advantages and Disadvantages

Advantages

  • High voltage capability allows for versatile use in power applications
  • Low input capacitance enhances efficiency
  • Fast switching speed reduces power loss

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Larger physical size due to TO-247 package

Working Principles

STW14NM65N operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high power loads.

Detailed Application Field Plans

STW14NM65N finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to STW14NM65N include: - IRFP4568PbF - FDPF18N50T - IXFK44N60Q3

In conclusion, STW14NM65N is a high-performance power MOSFET suitable for a wide range of power switching applications, offering advantages such as high voltage capability, low input capacitance, and fast switching speed. While it may have some disadvantages, its working principles and detailed application field plans make it an essential component in modern electronic systems.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STW14NM65N v technických řešeních

  1. What is the maximum drain-source voltage rating of STW14NM65N?

    • The maximum drain-source voltage rating of STW14NM65N is 650V.
  2. What is the continuous drain current rating of STW14NM65N?

    • The continuous drain current rating of STW14NM65N is 14A.
  3. What is the on-resistance of STW14NM65N?

    • The on-resistance of STW14NM65N is typically 0.19 ohms.
  4. Can STW14NM65N be used in high-power applications?

    • Yes, STW14NM65N is suitable for high-power applications due to its high voltage and current ratings.
  5. What type of package does STW14NM65N come in?

    • STW14NM65N is available in a TO-247 package.
  6. Is STW14NM65N suitable for switching power supplies?

    • Yes, STW14NM65N is commonly used in switching power supply applications due to its high voltage and current handling capabilities.
  7. Does STW14NM65N require a heat sink for operation?

    • In high-power applications or when operating at high currents, it is recommended to use a heat sink with STW14NM65N to ensure proper thermal management.
  8. What are the typical applications for STW14NM65N?

    • Typical applications for STW14NM65N include motor control, lighting, power supplies, and industrial equipment.
  9. What is the gate threshold voltage of STW14NM65N?

    • The gate threshold voltage of STW14NM65N is typically around 4V.
  10. Is STW14NM65N suitable for automotive applications?

    • Yes, STW14NM65N is designed to meet automotive quality and reliability standards, making it suitable for automotive applications such as electric vehicle power systems and battery management.