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STP38N65M5
Introduction
The STP38N65M5 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Semiconductor device
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-220
- Essence: Efficient power management
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 650V
- Current Rating: 38A
- On-Resistance: 0.065 ohms
- Gate Threshold Voltage: 3V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STP38N65M5 features a standard TO-220 pin configuration with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal for the load 3. Source (S): Common reference terminal
Functional Features
- High voltage capability enables use in power supply and motor control applications
- Low on-resistance minimizes power losses and improves efficiency
- Fast switching speed allows for rapid response in switching operations
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance leads to reduced power dissipation
- Fast switching speed enhances overall system performance
Disadvantages
- Sensitive to static electricity and voltage spikes
- Requires careful handling and protection during assembly and operation
Working Principles
The STP38N65M5 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET switches on, allowing current to flow through the device.
Detailed Application Field Plans
The STP38N65M5 finds extensive use in the following application fields: - Switched-mode power supplies - Motor drives - Inverters - Electronic ballasts - Audio amplifiers
Detailed and Complete Alternative Models
- STP36NF06L: Similar voltage and current ratings with enhanced thermal performance
- IRF540N: Comparable specifications with different packaging options
- IXFH38N65Q: Higher current rating and lower on-resistance for more demanding applications
In conclusion, the STP38N65M5 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power switching applications across different industries.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STP38N65M5 v technických řešeních
What is the maximum drain-source voltage of STP38N65M5?
- The maximum drain-source voltage of STP38N65M5 is 650 volts.
What is the continuous drain current rating of STP38N65M5?
- The continuous drain current rating of STP38N65M5 is 38 amperes.
What is the on-state resistance (RDS(on)) of STP38N65M5?
- The on-state resistance (RDS(on)) of STP38N65M5 is typically 0.065 ohms.
What is the gate threshold voltage of STP38N65M5?
- The gate threshold voltage of STP38N65M5 is typically 4 volts.
What are the typical applications for STP38N65M5?
- STP38N65M5 is commonly used in high power switching applications such as power supplies, motor control, and inverters.
What is the operating temperature range of STP38N65M5?
- The operating temperature range of STP38N65M5 is -55°C to 150°C.
Does STP38N65M5 require a heat sink for operation?
- Yes, STP38N65M5 typically requires a heat sink for efficient heat dissipation during operation.
Is STP38N65M5 suitable for use in automotive applications?
- Yes, STP38N65M5 is suitable for use in automotive applications due to its high voltage and current handling capabilities.
What are the recommended gate driver specifications for STP38N65M5?
- It is recommended to use a gate driver capable of providing sufficient gate-source voltage and current to drive STP38N65M5 effectively.
Can STP38N65M5 be used in parallel to increase current handling capability?
- Yes, STP38N65M5 can be used in parallel to increase the overall current handling capability in high-power applications. However, proper attention should be given to current sharing and thermal management.